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No Part number Description ( Function ) Manufacturers PDF
6 MS1329 RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. MS1329 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS IC Power Dissipation Collector current TJ Junction Temperature TSTG Storage

Advanced Power Technology - MS1329 pdf datasheet
Advanced Power Technology
MS1329 datasheet pdf
5 MS1336 RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1336 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitte

Advanced Power Technology - MS1336 pdf datasheet
Advanced Power Technology
MS1336 datasheet pdf
4 MS1337 RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1337 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current PDISS TJ Power Dissipation Junction Temperature TSTG Storage Temp

Advanced Power Technology - MS1337 pdf datasheet
Advanced Power Technology
MS1337 datasheet pdf
3 MS13N30 N-Channel 30-V (D-S) MOSFET

MS13N30 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impedance • RoHS compliant package Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Packing & Order Information 3,0

Bruckewell - MS13N30 pdf datasheet
Bruckewell
MS13N30 datasheet pdf
2 MS13N50 N-Channel MOSFET

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 100% EAS Test • Extended Safe Operating Area • RoHS compliant package Application • Electronic lamp ballasts • based on half bridge topology • PFC (Power Factor Correction) • SMPS (Switched Mode Power Supplies) Packing & Order Informat

Bruckewell - MS13N50 pdf datasheet
Bruckewell
MS13N50 datasheet pdf
1 MS13P21 P-Channel MOSFET

MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SC70-3 saves board space • Fast switching speed • High performance trench technology • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol P

Bruckewell - MS13P21 pdf datasheet
Bruckewell
MS13P21 datasheet pdf


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