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MRF650 Datasheet PDF Search


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No Part number Description ( Function ) Manufacturers PDF
1 MRF650 RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola - MRF650 pdf datasheet
Motorola
MRF650 datasheet pdf



The datasheet is usually used for technical communication to describe technical characteristics of an item or product.
It can be published by the manufacturer to help people choose products or to help use the products.


MRF65 Data sheets

No Description ( Function) Manufacturers PDF
MRF650   RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF658   RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF6522-70R3   RF Power Field Effect Transistor

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF6522-10R1   RF Power FET

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF654   RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF653   RF POWER TRANSISTOR NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF652   RF POWER TRANSISTORS NPN SILICON

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

Motorola
Motorola
datasheet pdf
MRF6522-60   Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

New Jersey Semiconductor
New Jersey Semiconductor
datasheet pdf
MRF652   Trans GP BJT NPN 16V 2A 3-Pin NI-200Z

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

New Jersey Semiconductor
New Jersey Semiconductor
datasheet pdf
MRF654   BJT

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitr

New Jersey Semiconductor
New Jersey Semiconductor
datasheet pdf


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