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MDD1752 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
1 MDD1752
N-Channel Trench MOSFET

MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 40V ID = 50A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V Applications Inverters General purpose applications D G http://www.datasheet39.com/ S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain C

MagnaChip Semiconductor - MDD1752 pdf datasheet
MagnaChip Semiconductor
MDD1752 datasheet pdf

The datasheet is usually used for technical communication to describe technical characteristics of an item or product.
It can be published by the manufacturer to help people choose products or to help use the products.


MDD17 Data sheets

No Description ( Function) Manufacturers PDF
MDD1752   N-Channel Trench MOSFET

MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Lo

MagnaChip Semiconductor
MagnaChip Semiconductor
datasheet pdf
MDD172-16N1   High Power Diode Modules

MDD 172 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 190 A VRRM = 800-1800 V VRSM VV 900 1300 1500 1700 1900 VRRM 800 1200 1400 1600 1800 Type MDD 172-08N1 MDD 172-12N1 MDD 172-14N1 MDD 172-16N1 MDD 172-18N1 312 2 1 3 Symbol IFRMS IFAVM I FSM òi2dt TVJ T VJM Tst

IXYS Corporation
IXYS Corporation
datasheet pdf
MDD172-12N1   High Power Diode Modules

MDD 172 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 190 A VRRM = 800-1800 V VRSM VV 900 1300 1500 1700 1900 VRRM 800 1200 1400 1600 1800 Type MDD 172-08N1 MDD 172-12N1 MDD 172-14N1 MDD 172-16N1 MDD 172-18N1 312 2 1 3 Symbol IFRMS IFAVM I FSM òi2dt TVJ T VJM Tst

IXYS Corporation
IXYS Corporation
datasheet pdf
MDD172   High Power Diode Modules

MDD 172 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 190 A VRRM = 800-1800 V 2 1 3 VRSM VV 900 1300 1500 1700 1900 VRRM Type 3 1 2 800 1200 1400 1600 1800 MDD 172-08N1 MDD 172-12N1 MDD 172-14N1 MDD 172-16N1 MDD 172-18N1 Symbol IFRMS IFAVM IFSM Test Conditions

IXYS Corporation
IXYS Corporation
datasheet pdf
MDD1754   N-channel Trench MOSFET

MDD1754 – N-Channel Trench MOSFET MDD1754 N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), L

MagnaChip
MagnaChip
datasheet pdf
MDD172-18N1   High Power Diode Modules

MDD 172 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 190 A VRRM = 800-1800 V VRSM VV 900 1300 1500 1700 1900 VRRM 800 1200 1400 1600 1800 Type MDD 172-08N1 MDD 172-12N1 MDD 172-14N1 MDD 172-16N1 MDD 172-18N1 312 2 1 3 Symbol IFRMS IFAVM I FSM òi2dt TVJ T VJM Tst

IXYS Corporation
IXYS Corporation
datasheet pdf


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