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No Part number Description ( Function ) Manufacturers PDF
1 K3114 2SK3114

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

NEC - K3114 pdf datasheet
NEC
K3114 datasheet pdf



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K311 Data sheets

No Description ( Function) Manufacturers PDF
K3115   2SK3115

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

NEC
NEC
datasheet pdf
K3114   2SK3114

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

NEC
NEC
datasheet pdf
K3116   2SK3116

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

NEC
NEC
datasheet pdf
K3113   2SK3113

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

NEC
NEC
datasheet pdf
K3115B   N-CHANNEL POWER MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS

Renesas
Renesas
datasheet pdf


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