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No Part number Description ( Function ) Manufacturers PDF
11 IRFZ44N Power MOSFET

PD - 94053 IRFZ44N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 17.5mΩ G S ID = 49A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is univ

International Rectifier - IRFZ44N pdf datasheet
International Rectifier
IRFZ44N datasheet pdf
10 IRFZ44N N-channel enhancement mode TrenchMOS transistor

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ44N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 5

NXP - IRFZ44N pdf datasheet
NXP
IRFZ44N datasheet pdf
9 IRFZ44N Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor - IRFZ44N pdf datasheet
New Jersey Semiconductor
IRFZ44N datasheet pdf
8 IRFZ44N N-CHANNEL Power MOSFET

APPLICATION ‹ Buck Converter High Side Switch ‹DC motor control , Ups ...etc , & other Application VDSS 55V RDS(ON) Max. 17.5mȍ PIN CONFIGURATION TO-220 Front View ID 50A IRFZ44N N-CHANNEL Power MOSFET FEATURES ‹Ultra Low ON Resistance ‹Low Gate Charge ‹ Dynamic dv/dt Rating ‹ Inductive Switching Curves ‹ Peak Current vs Pulse Width Curve SYMBOL D GATE DRAIN SOURCE G S 12 3 ʳ ABSOLUTE MAXIMUM RATINGS N-Channel MOSFET Rating Drain to Source Voltage Drain to Current Ё Continuous Tc = 25к, VGS@10V Ё Continuous Tc = 100к, VGS@10V Ё Pulsed Tc = 25к, VGS@10V (Note 1) Gate-to-Source Voltage Ё Continue Total Power Dissipation Derating Factor above

Matsu - IRFZ44N pdf datasheet
Matsu
IRFZ44N datasheet pdf
7 IRFZ44N N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS G

INCHANGE - IRFZ44N pdf datasheet
INCHANGE
IRFZ44N datasheet pdf
6 IRFZ44NL (IRFZ44NL / IRFZ44NS) Power MOSFET

PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a

International Rectifier - IRFZ44NL pdf datasheet
International Rectifier
IRFZ44NL datasheet pdf


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