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No Part number Description ( Function ) Manufacturers PDF
4729 IRF-182xx
Inductors

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale • Flame-retardant coating and color band identification. • Uniform coating is excellent for automatic insertion. • Available in bulk, ammo and reel pack per EIA RS-296. • Superior electrical specifications high Q and self resonant frequency, low DC resistance, high rated DC current. Inductance Tolerance: ± 5%, ± 10%, ± 20%. Other tolerances available on request. Insulation Resistance: 1000 Megohm minimum per MIL-STD-202, M

Vishay Intertechnology - IRF-182xx pdf datasheet
Vishay Intertechnology
IRF-182xx datasheet pdf
4728 IRF-46
Inductors Epoxy Conformal Coated

www.datasheet39.com IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resistance to ensure long life • Heat resistant adhesives and special structural design for effective open circuit measurement ELECTRICAL SPECIFICATIONS STANDARD ELECTRICAL SPECIFICATIONS IND. AT 1 kHz (µH) TOL. TEST DCR SRF RATED DC Q FREQ. MAX. MIN. CURRENT MIN. (MHz) (Ohms) (MHz) (mA) 80 80 80 80 80 80 80 80 80 60 60 60 60 50 50 40 40 40 40 40 40 2.52 2.52 2.52 2.52 2.52 2.5

Vishay Siliconix - IRF-46 pdf datasheet
Vishay Siliconix
IRF-46 datasheet pdf
4727 IRF034
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parall

International Rectifier - IRF034 pdf datasheet
International Rectifier
IRF034 datasheet pdf
4726 IRF034
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-continuous@ TC=25℃ 25 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ Storag

Inchange Semiconductor - IRF034 pdf datasheet
Inchange Semiconductor
IRF034 datasheet pdf
4725 IRF044
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

www.datasheet39.com PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switch

International Rectifier - IRF044 pdf datasheet
International Rectifier
IRF044 datasheet pdf
4724 IRF044
N-CHANNEL POWER MOSFET

IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 60V 44A 0.028Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD

Seme LAB - IRF044 pdf datasheet
Seme LAB
IRF044 datasheet pdf


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