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No Part number Description ( Function ) Manufacturers PDF
1 FGA70N33BTD 70A PDP IGBT

FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant Applications • PDP System August 2011 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES ICpulse(1)* IC pulse(2)* PD VRRM IF(AV) IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed

Fairchild Semiconductor - FGA70N33BTD pdf datasheet
Fairchild Semiconductor
FGA70N33BTD datasheet pdf



The datasheet is usually used for technical communication to describe technical characteristics of an item or product.
It can be published by the manufacturer to help people choose products or to help use the products.


FGA70N33BT Data sheets

No Description ( Function) Manufacturers PDF
FGA70N33BTD   70A PDP IGBT

FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant Applications • PDP System August 2011 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES ICpulse(1)* IC pulse(2)* PD VRRM IF(AV) IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed

Fairchild Semiconductor
Fairchild Semiconductor
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