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FDH Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
31 FDH
High Conductance Low Leakage Diode

FDH300/A / FDLL300/A / FDH333 / FDLL333 Discrete POWER & Signal Technologies FDH/FDLL 300/A / 333 COLOR BAND MARKING DEVICE FDLL300 FDLL300A 1ST BAND BROWN BROWN BROWN 2ND BAND GREEN YELLOW BLUE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL333 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Work

Fairchild Semiconductor - FDH pdf datasheet
Fairchild Semiconductor
FDH datasheet pdf
30 FDH038AN08A1
N-Channel PowerTrench MOSFET

FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D Applications • 42V Automotive Load Control • Starter / Al

Fairchild Semiconductor - FDH038AN08A1 pdf datasheet
Fairchild Semiconductor
FDH038AN08A1 datasheet pdf
29 FDH047AN08A0
N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82684 Applications • 42V Automotive Load Control • Starter / Alternator System

Fairchild Semiconductor - FDH047AN08A0 pdf datasheet
Fairchild Semiconductor
FDH047AN08A0 datasheet pdf
28 FDH055N15A
MOSFET

FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

Fairchild Semiconductor - FDH055N15A pdf datasheet
Fairchild Semiconductor
FDH055N15A datasheet pdf
27 FDH1000
High Conductance Switching Diodes

Fairchild Semiconductor - FDH1000 pdf datasheet
Fairchild Semiconductor
FDH1000 datasheet pdf
26 FDH1040
Fixed Inductors

Fixed Inductors for Surface Mounting FDH1040/FDH1040B Inductance Range: 0.36~0.56µH DIMENSIONS FDH1040 11.2 4.0 Max. 2.55 (6.0) 2.55 FDH1040B 11.3 4.0 Max. 2.35 (6.6) 2.35 10.2 10.2 7.5 4.0 Tolerance : ±0.3 (Unit: mm) Recommended patterns FDH1040 FDH1040B 8.1 4.1 5.4 4.1 (Unit: mm) 3.8 6.0 3.8 (Unit: mm) www.datasheet39.com FEATURES 11.3×10.2mm square and 4.0mm Max. height. Magnetically shielded construction low DC resistance. Suitable for large current T

TOKO - FDH1040 pdf datasheet
TOKO
FDH1040 datasheet pdf


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