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No Part number Description ( Function ) Manufacturers PDF
1 FCD2250N80Z MOSFET

FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features • RDS(on) = 1.8 Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduc

Fairchild Semiconductor - FCD2250N80Z pdf datasheet
Fairchild Semiconductor
FCD2250N80Z datasheet pdf



The datasheet is usually used for technical communication to describe technical characteristics of an item or product.
It can be published by the manufacturer to help people choose products or to help use the products.


FCD2250N80 Data sheets

No Description ( Function) Manufacturers PDF
FCD2250N80Z   MOSFET

FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features • RDS(on) = 1.8 Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduc

Fairchild Semiconductor
Fairchild Semiconductor
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