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D2162 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
1 D2162
2SD2162

DATA SHEET SILICON POWER TRANSISTOR www.datasheet39.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFORMATION Ordering Name 2SD2162 Package Isolated TO-220 (Isolated TO-220) FEATURES • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A) • F

NEC - D2162 pdf datasheet
NEC
D2162 datasheet pdf

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D21 Data sheets

No Description ( Function) Manufacturers PDF
D2102    2SD2102

2SD2102 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s)

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
D2137   2SD2137

Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation vol

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf
D2144    2SD2144

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial plana

Rohm
Rohm
datasheet pdf
D2162    2SD2162

DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This tr

NEC
NEC
datasheet pdf
D2103    2SD2103

2SD2103 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 2SD2103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter v

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
D2136    2SD2136

Datasheet39.com Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collec

Panasonic Semiconductor
Panasonic Semiconductor
datasheet pdf


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