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2 D2118 2SD2118

Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current IC 5 ICP 10 Collector power dissipation 2SD2118 Junction temperature PC Tj 1 10 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=10ms Unit V V V A(DC) A(Pulse

Rohm - D2118 pdf datasheet
D2118 datasheet pdf
1 D2118 NPN Plastic Encapsulated Transistor

Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collec

SeCoS - D2118 pdf datasheet
D2118 datasheet pdf

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