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No Part number Description ( Function ) Manufacturers PDF
8 D209L HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要参数 MAIN CHARACTERISTICS IC VCEO PC 12A 400V 120W 封装 Package 用途 z 节能灯 z 电子镇流器 z 高频开关电源 z 高频功率变换 z 一般功率放大电路 APPLICATIONS z Energy-saving light z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier 产品特性 z高耐压 z高电流容量 z高开关速度 z高可靠性 z环保(RoHS)产品 FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product TO-3PN(B) TO-247 订货

Jilin Sino - D209L pdf datasheet
Jilin Sino
D209L datasheet pdf
7 D209L Silicon NPN Power Transistor

tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One.. Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D209L i 1 23 PIN 1.BASE 2.COLLECTOR 3. BETTER TO-3PN package uQi ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V Ic Collector Current-Conti

New Jersey Semi-Conductor - D209L pdf datasheet
New Jersey Semi-Conductor
D209L datasheet pdf
6 D209L Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc w

Inchange Semiconductor - D209L pdf datasheet
Inchange Semiconductor
D209L datasheet pdf
5 D209L NPN Transistor

ATE - D209L pdf datasheet
ATE
D209L datasheet pdf
4 D209L Low-frequency amplification shell rated bipolar transistors

R 3DD 209L µÍƵ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«Ð;§Ìå¹Ü D209L ²úÆ·ÌØÐÔ ¡ô ¸ßÄÍѹ ¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃ; ¡ô ¸ßƵ¿ª¹ØµçÔ´ ¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßƵ¹¦Âʱ任 ¡ô Ò»°ã¹¦ÂÊ·Å´óµç· ÒýÏ߶ËÐòºÅ¼°µÈЧµç·ͼ ¸ÅÊö 3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦Âʾ§Ìå¹Ü £¬ ÖÆÔìÖвÉÓà µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º ¸ßѹƽÃ湤ÒÕ¼¼Êõ ¡¢ ÈýÖØÀ©É¢¼¼ ÊõµÈ £¬ ²¢ÇÒ²ÉÈ¡ÁËÄܹ»×î ´óÏ޶ȵļæ¹ËµçÁ÷ÈÝÁ¿ÓëÄÍ

ETC - D209L pdf datasheet
ETC
D209L datasheet pdf
3 D209L Transistor

ATE - D209L pdf datasheet
ATE
D209L datasheet pdf


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