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4 B1240 2SB1240

2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (−32V, −2A) 2SB1188 / 2SB1182 / 2SB1240 !Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SB1188 0.5±0.1 2SB1182 1.5±0.3 0.2 4.5 + −0.1 1.6±0.1 0.2 1.5 + −0.1 6.5±0.2 0.2 5.1+ −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 9.5±0.5 2.5 +0.2 −0.1 4.0±0.3 0.3 5.5+ −0.1 0.9 1.5 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4 + −0.05 0.75 0.9 0.65±0.1 !Structure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.55±0.1 2

ROHM Electronics - B1240 pdf datasheet
ROHM Electronics
B1240 datasheet pdf
3 B1240 2SB1240

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FExternal dimensions (Unit: mm) FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FElectrical characteristics (Ta = 25_C) 216 Transistors FPackaging specifications and hFE hFE values are classified as follows : 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FEle

Rohm - B1240 pdf datasheet
Rohm
B1240 datasheet pdf
2 B1240B250C1000-700 Diode

American Microsemiconductor - B1240B250C1000-700 pdf datasheet
American Microsemiconductor
B1240B250C1000-700 datasheet pdf
1 B1240L Diode

American Microsemiconductor - B1240L pdf datasheet
American Microsemiconductor
B1240L datasheet pdf


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