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2SK321 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
14 2SK321
SI N-CHANNEL JUNCTION

Panasonic Semiconductor - 2SK321 pdf datasheet
Panasonic Semiconductor
2SK321 datasheet pdf
13 2SK3211
Silicon N Channel MOS FET High Speed Power Switching

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain dio

Hitachi Semiconductor - 2SK3211 pdf datasheet
Hitachi Semiconductor
2SK3211 datasheet pdf
12 2SK3211
Silicon N Channel MOS FET

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 May 15, 2006 page 1 of 8 2SK3

Renesas - 2SK3211 pdf datasheet
Renesas
2SK3211 datasheet pdf
11 2SK3211L
Silicon N Channel MOS FET High Speed Power Switching

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain dio

Hitachi Semiconductor - 2SK3211L pdf datasheet
Hitachi Semiconductor
2SK3211L datasheet pdf
10 2SK3211L
Silicon N Channel MOS FET

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 May 15, 2006 page 1 of 8 2SK3

Renesas - 2SK3211L pdf datasheet
Renesas
2SK3211L datasheet pdf
9 2SK3211S
Silicon N Channel MOS FET High Speed Power Switching

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain dio

Hitachi Semiconductor - 2SK3211S pdf datasheet
Hitachi Semiconductor
2SK3211S datasheet pdf


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