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2SD2641 Datasheet PDF Search


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No Part number Description ( Function ) Manufacturers PDF
1 2SD2641 Silicon NPN Triple Diffused Planar Transistor

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanken Electric - 2SD2641 pdf datasheet
Sanken Electric
2SD2641 datasheet pdf



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2SD264 Data sheets

No Description ( Function) Manufacturers PDF
2SD2645   Color TV Horizontal Deflection Output Applications

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
2SD2642   Silicon NPN Transistor

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanken Electric
Sanken Electric
datasheet pdf
2SD2646   Color TV Horizontal Deflection Output Applications

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
2SD2642   Silicon NPN Darlington Power Transistor

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Inchange Semiconductor
Inchange Semiconductor
datasheet pdf
2SD2648   Color TV Horizontal Deflection Output Applications

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
2SD2641   Silicon NPN Triple Diffused Planar Transistor

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanken Electric
Sanken Electric
datasheet pdf
2SD2649   NPN Triple Diffused Planar Silicon Transistor

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MH

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf


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