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No Part number Description ( Function ) Manufacturers PDF
5 2N5237
Type 2N5237 Geometry 3111 Polarity NPN

Data Sheet No. 2N5237 Type 2N5237 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N5237 REF: MIL-PRF-19500/394 TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TA = 25oC ambient Derate above 25

Semicoa Semiconductor - 2N5237 pdf datasheet
Semicoa Semiconductor
2N5237 datasheet pdf
4 2N5237
Trans GP BJT NPN 120V 10A 3-Pin TO-5

New Jersey Semiconductor - 2N5237 pdf datasheet
New Jersey Semiconductor
2N5237 datasheet pdf
3 2N5237
NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junc

Microsemi Corporation - 2N5237 pdf datasheet
Microsemi Corporation
2N5237 datasheet pdf
2 2N5237
NPN Power Silicon Transistor

NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 • TO-5 Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Total Power Dissipation @ @ TA TA = = +25 +25 °C °C (1) (2) Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Junction_to-Ambient Symbol VCEO VCBO VEBO IC PT Top, Tstg RθJC RθJA 2N4150 70 100 2N5237 120 150 10.0 4.0 10 175 -65 to +200 10.0 175.0 2N5238 170 200 Units Vdc Vdc Vdc Adc W W °C °C/W 1) Derate linearly @ 5.7 mW/°C for TA > +25°C 2) Derate linearly @ 100 m

Aeroflex - 2N5237 pdf datasheet
Aeroflex
2N5237 datasheet pdf
1 2N5237S
NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junc

Microsemi Corporation - 2N5237S pdf datasheet
Microsemi Corporation
2N5237S datasheet pdf


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