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No Part number Description ( Function ) Manufacturers PDF
8 2N4150 Type 2N4150 Geometry 9201 Polarity NPN

Data Sheet No. 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Power switching transistor for high speed switching applicatons. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N4150 REF: MIL-PRF-19500/394 TO-5 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation at 25oC ambient Derate above 25oC Power Dissipation at 25oC ambient Derate above 25oC Thermal

Semicoa Semiconductor - 2N4150 pdf datasheet
Semicoa Semiconductor
2N4150 datasheet pdf
7 2N4150 NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temp. Range 2N4150 2N5237 2N5238 Symbol 2N4150S 2N5237S 2N5238S Unit VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC RθJA 70 100 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 0 170 200 Vdc Vdc Vdc Adc W 0 TO- 5* 2N4150, 2N5237, 2N5238 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junc

Microsemi Corporation - 2N4150 pdf datasheet
Microsemi Corporation
2N4150 datasheet pdf
6 2N4150 (2N4xxx) NPN Transistors

API Electronics - 2N4150 pdf datasheet
API Electronics
2N4150 datasheet pdf
5 2N4150 Trans GP BJT NPN 70V 10A 3-Pin TO-5

New Jersey Semiconductor - 2N4150 pdf datasheet
New Jersey Semiconductor
2N4150 datasheet pdf
4 2N4150 NPN Power Silicon Transistor

2N4150 NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/394  TO-5 Package Rev. V1 Electrical Characteristics1 Parameter Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current On Characteristics Collector - Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Test Conditions IC = 100 mAdc VEB = 7.0 Vdc VEB = 5.0 Vdc VBE = 0.5 Vdc, VCE = 60 Vdc VCE = 60 Vdc VCB = 100 Vdc VCB = 100 Vdc IC = 1.0

MA-COM - 2N4150 pdf datasheet
MA-COM
2N4150 datasheet pdf
3 2N4150 NPN Power Silicon Transistor

NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 • TO-5 Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Total Power Dissipation @ @ TA TA = = +25 +25 °C °C (1) (2) Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Junction_to-Ambient Symbol VCEO VCBO VEBO IC PT Top, Tstg RθJC RθJA 2N4150 70 100 2N5237 120 150 10.0 4.0 10 175 -65 to +200 10.0 175.0 2N5238 170 200 Units Vdc Vdc Vdc Adc W W °C °C/W 1) Derate linearly @ 5.7 mW/°C for TA > +25°C 2) Derate linearly @ 100 m

Aeroflex - 2N4150 pdf datasheet
Aeroflex
2N4150 datasheet pdf


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