ZXMN3A01F PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 4 | ZXMN3A01F | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.12 ID=2.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • |
 Zetex Semiconductors |
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| 3 | ZXMN3A01F | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 0.12Ω @ VGS = 10V ID TA = +25°C 2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applicatio |
 Diodes |
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| 2 | ZXMN3A01FTA | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 0.12Ω @ VGS = 10V ID TA = +25°C 2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applicatio |
Diodes |
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| 1 | ZXMN3A01FTC | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 0.12Ω @ VGS = 10V ID TA = +25°C 2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applicatio |
Diodes |
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