| No | Part number | Description ( Function ) | Manufacturers | |
| 7 | XL1225 | Thyristor XL1225 Rev.E Mar.-2016 描述 / Descriptions TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package. 特征 / Features 低成本，高容量。 Intended for low cost high volume applications. 用途 / Applications 应用于高压控制电路。 Applied to high Voltage control circuit. 内部等效电路 / Equivalent Circuit DATA SHEET 引脚排列 / Pinnin |
 BLUE ROCKET ELECTRONICS |
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| 6 | XL1225 | MEDIUM POWER LOW VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR ORDERING INFORMATION Ordering Number Lead Free Halogen Free - XL1225G-xx-AE3-R XL1225L-xx-T92-B XL1225G-xx- |
 Unisonic Technologies |
|
| 5 | XL1225 | TO-92 Plastic-Encapsulate Transistors AVIC TECHNOLOGY CO.,LTD. TO-92 Plastic-Encapsulate Transistors XL1225 FEATURES TO-92 Silicon Planar pnpn Thyristor 1. CATHODE 2. GATE Current-IGT: ITRMS: VDRM: 120 0.6 400 µA 3. ANODE A 1 2 3 V Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter On state voltage Gate tri |
 Avic Technology |
|
| 4 | XL1225 | Silicon Planar pnpn Thyristor TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors XL1225 Silicon Planar pnpn Thyristor TO-92 FEATURES Current-IGT: 120 µA ITRMS: 0.6 A VDRM: 400 V 1. CATHODE 2. GATE 3. ANODE 123 Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test cond |
 TGS |
|
| 3 | XL1225 | SCRs TM HPM HAOPIN MICROELECTRONICS CO.,LTD. XL1225 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Simplified outlin |
 HAOPIN |
|
| 2 | XL1225 | SCR SCR XL 1225 / ML 1225 0.6A 300V (ML1225) / 400V (XL1225), IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications. ABSOLUTE MAXIMUM RATING Parameter Part No. Symbol Min. Max Repetitive Peak XL 1225 VDRM 400 Off State Voltage ML 1225 VDRM 300 On-State C |
 ETC |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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