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Datasheet W9N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | W9NA60 | STW9NA60 STW9NA60 ® STH9NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STW 9NA60 S TH9NA 60F I
V DSS
600 V 600 V
RDS(on)
< 0.8 Ω < 0.8 Ω
ID
9.5 A 6.4 A
s TYPICAL RDS(on) = 0.69 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100o |
 STMicroelectronics |
 |
| 6 | W9NB80 | STW9NB80 ®
STW9NB80
N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET
TYPE STW 9NB80
s s s s s s
V DSS 800 V
R DS(on) <1Ω
ID 9.3 A
TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHA |
STMicroelectronics |
|
| 5 | W9NB90 | STW9NB90 ® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE |
STMicroelectronics |
|
| 4 | W9NB90 | STW9NB90 ® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE |
STMicroelectronics |
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| Número de pieza | Descripción | Fabricantes | |
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