No | Part number | Description ( Function ) | Manufacturers | |
14 | VI20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V20100C, VF20100C, VB20100C, VI20100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF20100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage dro |
Vishay |
|
13 | VI20100S | High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS® TO-262AA K V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI20100S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency oper |
Vishay |
|
12 | VI20100SG | High Voltage Trench MOS Barrier Schottky Rectifier V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN 2 PIN 3 |
Vishay Siliconix |
|
11 | VI20100SG | High-Voltage Trench MOS Barrier Schottky Rectifier V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN 2 PIN 3 |
Vishay |
|
10 | VI20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 24 |
Vishay |
|
9 | VI20120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF20120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |