Datasheet VB10170C-E3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	VB10170C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation •	Vishay

VB10170C Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
VB10170C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High effic	Vishay
VB10170C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VB10170C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficien	Vishay

Esta página es del resultado de búsqueda del VB10170C-E3. Si pulsa el resultado de búsqueda de VB10170C-E3 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap