No | Part number | Description ( Function ) | Manufacturers | |
10 | VB10 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
|
9 | VB10 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
|
8 | VB100 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
|
7 | VB100X | Diode (spec sheet) |
American Microsemiconductor |
|
6 | VB10150S | High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V10150S, VF10150S, VB10150S, VI10150S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V10150S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF10150S PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low |
Vishay |
|
5 | VB10150S-M3 | High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com VB10150S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A TMBS ® TO-263AB K A NC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categoriza |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |