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UPD5702TU PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 UPD5702
NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP • PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT INTERNAL BLOCK DIAGRAM Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND D

California Eastern Labs
California Eastern Labs
pdf
2 UPD5702
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. Th

NEC
NEC
pdf
1 UPD5702
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. Th

NEC
NEC
pdf



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