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UBA2013T PDF Datasheet Search Results

The UBA2013T is Hb Driver IC. Search results on our website will show parts matching your search part number. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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No Part number Description ( Function ) Manufacturers PDF
1 UBA2013T
HB driver IC

UBA2013/L3 HB driver IC with PFC for fluorescent rings Rev. 00.01 — 23 February 2007 Preliminary data sheet 1. General description The UBA2013/L3 is a high voltage IC intended to drive and control fluorescent lamps. The IC can handle both cold and warm ignition of the lamp. It contains a TON-controlled PFC function, a half bridge controller circuit with level shifter and an

Philips
Philips
pdf

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Recommended search results related to UBA2013T

Part No Description ( Function) Manufacturers PDF
UBA2013   HB driver IC

UBA2013/L3 HB driver IC with PFC for fluorescent rings Rev. 00.01 — 23 February 2007 Preliminary data sheet 1. General description The UBA2013/L3 is a high voltage IC intended to drive and control fluorescent lamps. The IC can handle both cold and warm ignition of the lamp. It

Philips
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UBA2013L   HB driver IC

UBA2013/L3 HB driver IC with PFC for fluorescent rings Rev. 00.01 — 23 February 2007 Preliminary data sheet 1. General description The UBA2013/L3 is a high voltage IC intended to drive and control fluorescent lamps. The IC can handle both cold and warm ignition of the lamp. It

Philips
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02013Rxxxx   SUrface Mount Ceramic Capacitor

Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Ideal for Timed RC Circuits and Critical Tuning Applications QUICK REFERENCE DATA DESCRIPTION Rated Voltage UR (DC): NP0 Di

Skywell Technology
Skywell Technology
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2SA2013   DC/DC Converter Applications

Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features · Adoption of FBET

Sanyo Semicon Device
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2SK2013   Silicon N Channel MOS Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313 : VDSS = 180V : |Yfs| = 0.7 S (typ.) Absolute Maximum Ratings (Ta = 25

Toshiba Semiconductor
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