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TMDSEVM6678 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
100 TMD0507-2
Power GaAs MMIC

Toshiba
Toshiba
pdf
99 TMD0507-2A
Microwave Power GaAs MMIC

Toshiba
Toshiba
pdf
98 TMD0708-2
POWER GAAS MMIC

Toshiba Semiconductor
Toshiba Semiconductor
pdf
97 TMD1013-1
MICROWAVE POWER MMIC AMPLIFIER

Toshiba Semiconductor
Toshiba Semiconductor
pdf
96 TMD1013-1-431
Microwave Power MMIC Amplifier

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ „ High Power P1dB=33dBm(TYP.) High Power Added Efficiency ηadd=14%(TYP.) „ „ TMD1013-1-431 TMD1013-1-431 High Gain G1dB=25dB(TYP.) Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATU

Toshiba
Toshiba
pdf
95 TMD1414-2C
MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power

Toshiba Semiconductor
Toshiba Semiconductor
pdf


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