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TK6 PDF Datasheet

The TK6 is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
246 TK60A08J1
MOSFET ( Transistor )

TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60A08J1 Switching Regulator Application • • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS

Toshiba Semiconductor
Toshiba Semiconductor
pdf
245 TK60D08J1
Field Effect Transistor

TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60D08J1 Switching Regulator Application • • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VD

Toshiba Semiconductor
Toshiba Semiconductor
pdf
244 TK60F08K3
MOSFET ( Transistor )

TK60F08K3 MOSFETs Silicon N-channel MOS (U-MOS) TK60F08K3 1. Applications • • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3.

Toshiba Semiconductor
Toshiba Semiconductor
pdf
243 TK60J25D
MOSFET ( Transistor )

TK60J25D MOSFETs Silicon N-Channel MOS (π-MOS) TK60J25D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.0285 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink

Toshiba Semiconductor
Toshiba Semiconductor
pdf
242 TK60P03M1
MOSFET ( Transistor )

TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK60P03M1 1. Applications • • DC-DC Converters Desktop Computers 2. Features (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS

Toshiba Semiconductor
Toshiba Semiconductor
pdf
241 TK60S06K3L
MOSFET ( Transistor )

TK60S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK60S06K3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

Toshiba Semiconductor
Toshiba Semiconductor
pdf

[1]     [2]     [3]     [4]     [5]     [6]     [7]     >>>.....[41] 

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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