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Datasheet TK3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 46 | TK30A06J3A | Field Effect Transistor TK30A06J3A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)
TK30A06J3A
Switching Regulator Applications
z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V |
 Toshiba Semiconductor |
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| 45 | TK30A06N1 | MOSFETs TK30A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V |
Toshiba Semiconductor |
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| 44 | TK30E06N1 | MOSFETs TK30E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V |
Toshiba Semiconductor |
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| 43 | TK30J25D | MOSFETs TK30J25D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK30J25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, I |
Toshiba Semiconductor |
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