Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP31; 60V(Min)- TIP31A 80V(Min)- TIP31B; 100V(Min)- TIP31C ·Complement to Type TIP32/32A/32B/32C APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

TIP31 TIP31A TIP31B TIP31C SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP31 series devices are silicon NPN epitaxial-base power transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP31 Col

TIP31, TIP31A ... C NPN Version 2004-06-29 General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Collector current – Kollektorstrom Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1=B 2=C 3=E 3A TO-220AB 2.2 g Standard packaging in tubes Standard Lieferform in Stang

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TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C ◎ SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C Medium Power Linear Switching Applications - Complement to TIP32/32A/32B/32C Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP31 : TIP31A : TIP31B : TIP31C VCBO 40 60