No | Part number | Description ( Function ) | Manufacturers | |
28 | TIP147 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching applica |
Central Semiconductor |
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27 | TIP147 | PNP TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Package Designed for General Purpose Amplifier and Low Frequency Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Base Voltage Collector Emit |
CDIL |
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26 | TIP147 | Monolithic Construction With Built In Base- Emitter Shunt Resistors TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142 1 TO-3P PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP145 |
Fairchild Semiconductor |
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25 | TIP147 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP142, TIP147 Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors s |
STMicroelectronics |
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24 | TIP147 | 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145 VC |
Motorola Semiconductors |
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23 | TIP147 | Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc |
ON Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |