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TIC226D PDF Datasheet

The TIC226D is Triacs, SilICon Triacs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
4 TIC226D
Triacs

INCHANGE Semiconductor isc Triacs isc Product Specification TIC226D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a) Repetitive peak off-state voltage 400 V Repetitive peak reverse voltage 400 V RMS

Inchange Semiconductor
Inchange Semiconductor
pdf
3 TIC226D
SILICON TRIACS

TIC226 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating cas

Power Innovations Limited
Power Innovations Limited
pdf
2 TIC226D
SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirect

Comset Semiconductor
Comset Semiconductor
pdf
1 TIC226D
Thyristor TRIAC 400V 80A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
pdf

[1]    

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