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T3512H PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
256 T3048
T3/DS3/E3/STS-1 TRANSFORMERS

T3/DS3/E3/STS-1 TRANSFORMERS Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface Eight transformers in a surface mount package Models matched to leading transceiver ICs Return loss meets requirements of G.703 Recognized by UL1950 (some parts pending approval) Isolation voltage: 1500Vrms Electrical Specifications @ 25°C RoHS-5 RoHS-6 Turns Ratio OCL Primary Com

Pulse
Pulse
pdf
255 T3048NL
T3/DS3/E3/STS-1 TRANSFORMERS

T3/DS3/E3/STS-1 TRANSFORMERS Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface Eight transformers in a surface mount package Models matched to leading transceiver ICs Return loss meets requirements of G.703 Recognized by UL1950 (some parts pending approval) Isolation voltage: 1500Vrms Electrical Specifications @ 25°C RoHS-5 RoHS-6 Turns Ratio OCL Primary Com

Pulse
Pulse
pdf
254 T3049
T3/DS3/E3/STS-1 TRANSFORMERS

T3/DS3/E3/STS-1 TRANSFORMERS Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface Eight transformers in a surface mount package Models matched to leading transceiver ICs Return loss meets requirements of G.703 Recognized by UL1950 (some parts pending approval) Isolation voltage: 1500Vrms Electrical Specifications @ 25°C RoHS-5 RoHS-6 Turns Ratio OCL Primary Com

Pulse
Pulse
pdf
253 T3049NL
T3/DS3/E3/STS-1 TRANSFORMERS

T3/DS3/E3/STS-1 TRANSFORMERS Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface Eight transformers in a surface mount package Models matched to leading transceiver ICs Return loss meets requirements of G.703 Recognized by UL1950 (some parts pending approval) Isolation voltage: 1500Vrms Electrical Specifications @ 25°C RoHS-5 RoHS-6 Turns Ratio OCL Primary Com

Pulse
Pulse
pdf
252 T3055EL
MMFT3055EL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low th

Motorola
Motorola
pdf
251 T30N60BD1
IXST30N60BD1

High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive

IXYS Corporation
IXYS Corporation
pdf



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