No | Part number | Description ( Function ) | Manufacturers | |
97 | SI2300DS | N-Channel 30-V (D-S) MOSFET New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.068 at VGS = 4.5 V 0.085 at VGS = 2.5 V ID (A) 3.6a 3.4 Qg (Typ.) 3 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 |
Vishay Siliconix |
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96 | SI2301 | P-Channel Enhancement Mode MOSFET 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected] 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2301 D SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H |
JinYu |
|
95 | SI2301 | P-Channel 20-V(D-S) MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Cont |
YANGJING |
|
94 | SI2301 | P-Channel Enhancement Mode Field Effect Transistor MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-sou |
MCC |
|
93 | SI2301 | P-CHANNEL MOSFET SI2301 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 沟道场效应管,MOS 场效应管。 Trench FET Power MOSFET 100% Rg Tested. 用途 / Applications 主要用于显示屏驱动。 Primarily the display screen drive applications. 内部等效电路 / Equiva |
BLUE ROCKET ELECTRONICS |
|
92 | SI2301ADS | P-Channel 2.5-V (G-S) MOSFET Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V ID (A)b –2.0 –1.6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dra |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |