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Datasheet SVF Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
128 SVF10N60F   600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60F pdf
127 SVF10N60FG   600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60FG pdf
126 SVF10N60K   600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60K pdf
125 SVF10N60S   600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60S pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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