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Datasheet SVD8N60T Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SVD8N60T   600V N-CHANNEL MOSFET

www.DataSheet.co.kr SVD8N60T/SVD8N60F 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ri
Silan Microelectronics
Silan Microelectronics
datasheet SVD8N60T pdf

SVD8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SVD8N60F

600V N-CHANNEL MOSFET

Datasheet.es SVD8N60T/SVD8N60F 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the
Silan Microelectronics
Silan Microelectronics
datasheet pdf - Silan Microelectronics
SVD8N60T

600V N-CHANNEL MOSFET

Datasheet.es SVD8N60T/SVD8N60F 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the
Silan Microelectronics
Silan Microelectronics
datasheet pdf - Silan Microelectronics
SVD8N80T

800V N-CHANNEL MOSFET

SVD8N80T/F_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard
Silan Microelectronics
Silan Microelectronics
datasheet pdf - Silan Microelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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