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Datasheet SUP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 62 | SUP10250E | N-Channel MOSFET www.vishay.com
SUP10250E
Vishay Siliconix
N-Channel 250 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 250
RDS(on) () MAX. 0.0315 at VGS = 10 V 0.0325 at VGS = 7.5 V
ID (A) 63 62
Qg (TYP.) 57.6 nC
TO-220AB
Top View
S D G
Ordering Information: SUP10250E-GE3 (lead (Pb)-free and haloge |
 Vishay |
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| 61 | SUP15P01-52 | P-Channel MOSFET SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V
ID (A)
–15 –10 –10.5
TO-220AB
S
TO-263
G
DRAIN connected to TAB G G D S Top View SUP15P01-52 SUB15P01-52 P-Chan |
 Vishay Siliconix |
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| 60 | SUP18N15-95 | N-Channel MOSFET SUP18N15-95
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
FEATURES
rDS(on) (W)
0.095 @ VGS = 10 V
PRODUCT SUMMARY
VDS (V)
150
ID (A)
18 17.5
D TrenchFETr Power MOSFETS D 175_C Junction Temperature
APPLICATIONS
D 42-V Automotive Bus
0.100 @ VGS = 6 V
TO- |
Vishay Siliconix |
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| 59 | SUP28N15-52 | N-Channel MOSFET SUP28N15-52
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
150
FEATURES
ID (A)
28 26
rDS(on) (W)
0.052 @ VGS = 10 V 0.060 @ VGS = 6 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized
APPLICATIONS
D Primary Side Switch
D
TO-220AB
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Vishay Siliconix |
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