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Datasheet SUM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 122 | SUM09MN20-270 | N-Channel 200-V (D-S) 175C MOSFET SUM09N20-270
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.270 @ VGS = 10 V 0.300 @ VGS = 6 V
ID (A)
9 8.5
D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package
D
TO-263
G
G
D S |
 Vishay Siliconix |
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| 121 | SUM09N20-270 | N-Channel MOSFET SPICE Device Model SUM09N20-270 Vishay Siliconix N-Channel 200-V (D-S), 175°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model t |
 Vishay |
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| 120 | SUM10250E | N-Channel MOSFET www.vishay.com
SUM10250E
Vishay Siliconix
N-Channel 250 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 250
RDS(on) () MAX. 0.031 at VGS = 10 V 0.032 at VGS = 7.5 V
ID (A) 63.5 62.5
Qg (TYP.) 57.6 nC
TO-263
Top View
S D G
Ordering Information: SUM10250E-GE3 (lead (Pb)-free and haloge |
Vishay |
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| 119 | SUM110N02-03P | N-Channel 20-V (D-S) 175 C MOSFET SUM110N02-03P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
20
FEATURES
rDS(on) (W) ID (A)a
110a 110a
0.0032 @ VGS = 10 V 0.0052 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier
APP |
Vishay Siliconix |
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