No | Part number | Description ( Function ) | Manufacturers | |
35 | SUB15P01-52 | P-Channel MOSFET SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V ID (A) –15 –10 –10.5 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP15P01-52 SUB15P01-52 P-Channel MOSFET D S Top View D Parameter S |
Vishay Siliconix |
|
34 | SUB40N06-25L | N-Channel MOSFET SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.022 @ VGS = 10 V 0.025 @ VGS = 4.5 V ID (A) 40 40 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP40N06-25L SUB40N06-25L S N-Channel MOSFET D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE N |
Vishay Siliconix |
|
33 | SUB40N06-25L | Logic Level SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.022 @ VGS = 10 V 0.025 @ VGS = 4.5 V ID (A) 40 40 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP40N06-25L SUB40N06-25L S N-Channel MOSFET D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE N |
Vishay Siliconix |
|
32 | SUB45N03-13L | N-Channel MOSFET SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V ID (A) 45a 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS |
Vishay Siliconix |
|
31 | SUB60N06-18 | N-Channel MOSFET SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.018 ID (A) 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP60N06-18 G D S S Top View SUB60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source |
Vishay Siliconix |
|
30 | SUB610 | Schottky Barrier Diode Semiconductor SUB610 Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. SUB610 Marking 61B Package Code SOT-363 Outline Dimensions unit : mm 1.95~2.25 0.65 Typ. 1.15~1.35 0.30 Max. 1 2 3 0.65 Typ. 6 5 4 1.90~2. |
AUK |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |