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Datasheet STYN1012S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | STYN1012S | Discrete Thyristors STYN212(S) thru STYN1012(S)
Discrete Thyristors(SCRs)
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Millimeter | Sirectifier Semiconductors | thyristor |
STY Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | STY100NM60N | N-CHANNEL Power MOSFET STY100NM60N
Features
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package
Datasheet — production data
Type STY100NM60N
VDSS @ TJmax
650 V
RDS(on) max < 0.029 Ω
ID 98 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resis STMicroelectronics mosfet | | |
2 | STY100NS20FD | N-CHANNEL Power MOSFET N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY™ Power MOSFET
TYPE STY100NS20FD
n n n n n n n
STY100NS20FD
VDSS 200V
RDS(on) < 0.024Ω
ID 100 A
TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LOW ST Microelectronics mosfet | | |
3 | STY130NF20D | N-channel Power MOSFET STY130NF20D
N-channel 200 V, 0.01 Ω typ., 130 A STripFET™ II with fast recovery diode Power MOSFET in a Max247 package
Datasheet - production data
Features
Max247
3 2 1
Figure 1. Internal schematic diagram
Order code
VDS
RDS(on) max.
ID PTOT
STY130NF20D 200 V 0.012 Ω 130 A 450 W
• E STMicroelectronics mosfet | | |
4 | STY140NS10 | N-CHANNEL Power MOSFET N-CHANNEL 100V - 0.009 Ω - 140A MAX247™ MESH OVERLAY™ POWER MOSFET
TYPE STY140NS10
s s s
STY140NS10
VDSS 100V
RDS(on) <0.011Ω
ID 140A
TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelec ST Microelectronics mosfet | | |
5 | STY15NA100 | N-CHANNEL Power MOSFET STY15NA100
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247 MOSFET
PRELIMINARY DATA TYPE STY15NA100
s s
V DSS 1000 V
R DS(on) < 0.77 Ω
ID 15 A
s s s s s s
TYPICAL RDS(on) = 0.65 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW IN ST Microelectronics mosfet | | |
6 | STY16NA90 | N-CHANNEL Power MOSFET ®
STY16NA90
N - CHANNEL 900V - 0.5 Ω - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
PRELIMINARY DATA TYPE STY16NA90
s s
V DSS 900 V
R DS(on) < 0.54 Ω
ID 16 A
s s s s s s
TYPICAL RDS(on) = 0.5 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REP ST Microelectronics mosfet | | |
7 | STY25NA60 | N-CHANNEL Power MOSFET ®
STY25NA60
N - CHANNEL 600V - 0.225Ω - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
TYPE STY25NA60
s s
V DSS 600 V
R DS(on) < 0.24 Ω
ID 25 A
s s s s s
TYPICAL RDS(on) = 0.225 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TE ST Microelectronics mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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