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Datasheet STW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 297 | STW-195 | Retaining Ring Spec Sheet www.americanringmfg.com
STW-195 Retaining Ring Spec Sheet
Part Number: STW-195 STW - External JIS B 2804 Retaining Rings
Ring Specs
(D) Free Diameter: (t) Thickness: (b) Radial Wall:
Groove Specs:
(B) Application Diameter: (G) Groove Diameter: (W) Groove Width: Groove Depth:
Other Specs
Approximate |
 AmericanRing |
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| 296 | STW10NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STH10NA50/FI STW10NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH10NA50 STH10NA50FI STW10NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω
ID 9.6 A 5.6 A 9.6 A
TO-247
TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN |
 ST Microelectronics |
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| 295 | STW10NB60 | N-CHANNEL Power MOSFET ®
STW10NB60
N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET
TYPE ST W10NB60
s s s s s
V DSS 600 V
R DS(on) < 0.8 Ω
ID 10 A
TYPICAL RDS(on) = 0.69 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2
3
DESCRIPTION |
ST Microelectronics |
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| 294 | STW10NC60 | N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI
s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN |
ST Microelectronics |
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