Datasheet STN4822 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STN4822	Dual N Channel Enhancement Mode MOSFET STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery po	Stanson Technology

STN4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STN4NF20L	N-Channel Power MOSFET / Transistor STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code STN4NF20L VDSS 200 V RDS(on) max. < 1.5 Ω ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability ID 1A Application Switching applications	STMicroelectronics
STN4828	Dual N Channel Enhancement Mode MOSFET STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize	Stanson Technology
STN4438	N-Channel Enhancement Mode MOSFET STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resist	Stanson

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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