Datasheet STN4416 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STN4416	N Channel Enhancement Mode MOSFET STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices	Stanson Technology

STN4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STN4NF20L	N-Channel Power MOSFET / Transistor STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code STN4NF20L VDSS 200 V RDS(on) max. < 1.5 Ω ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability ID 1A Application Switching applications	STMicroelectronics
STN4828	Dual N Channel Enhancement Mode MOSFET STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize	Stanson Technology
STN4438	N-Channel Enhancement Mode MOSFET STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resist	Stanson

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Número de pieza	Descripción	Fabricantes	PDF
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