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Datasheet STB50NE10L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STB50NE10L   N-CHANNEL POWER MOSFET

® STB50NE10L N - CHANNEL 100V - 0.020Ω - 50A - D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STB50NE10L s s s s s V DSS 100 V R DS(on) <0.025 Ω ID 50 A s TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC A
 ST Microelectronics
ST Microelectronics		 datasheet STB50NE10L pdf

STB50NE Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STB50NE10L

N-CHANNEL POWER MOSFET

® STB50NE10L N - CHANNEL 100V - 0.020Ω - 50A - D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STB50NE10L s s s s s V DSS 100 V R DS(on) <0.025 Ω ID 50 A s TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GAT
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STB50NE10

N-CHANNEL POWER MOSFET

® STB50NE10 N - CHANNEL 100V - 0.021Ω - 50A - D2PAK STripFET™ POWER MOSFET TYPE STB50NE10 s s s s s V DSS 100 V R DS(on) <0.027 Ω ID 50 A s TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STB50NE08

N-CHANNEL POWER MOSFET

STB50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST B50NE08 s s s s s V DSS 80 V R DS(on) <0.024 Ω ID 50 A s TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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