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SSP4N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
4 SSP4N60
(SSP4N55 / SSP4N60) N-Channel Power MOSFET

Samsung Electronics
Samsung Electronics
pdf
3 SSP4N60AS
Advanced Power MOFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID

Fairchild Semiconductor
Fairchild Semiconductor
pdf
2 SSP4N60AS
Advanced Power MOFET

Samsung Electronics
Samsung Electronics
pdf
1 SSP4N60B
600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

Fairchild Semiconductor
Fairchild Semiconductor
pdf


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