DATA SHEET SEMICONDUCTOR TO-92 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM : 1 W :2W (TA=25℃) (TC=25℃) SS8050 TRANSISTOR (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Cont

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

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NPN General Purpose Transistors P b Lead(Pb)-Free SS8050 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Symbol VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Total Device Dissipation TA=25°C Junction and Storage, Temperature PD TJ,Tstg Value 4

SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark

Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS z High Collector Current. Production specification SS8050 ORDERING INFORMATION Type No. Marking SS8050 Y1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol