No | Part number | Description ( Function ) | Manufacturers | |
1 | SRF2080CE | (SRF2070CE - SRF20100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SRF2070CE Thru SRF20100CE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 70-100 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vo |
Mospec Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to SRF2080CE |
Part No | Description ( Function) | Manufacturers | |
SRF2080 | (SRF2070 - SRF20100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideal |
Mospec Semiconductor |
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SRF2080C | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER SRF2020C THRU SRF20100C VOLTAGE RANGE CURRENT 20 to100 Volts 16.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability classification 94V-O Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MILS-1 |
MIC |
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2SA2080 | SILICON PNP EPITAXIAL To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
Renesas Technology |
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2SK2080-01 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2080-01 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purp |
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2SK2080-01R | N-CHANNEL SILICON POWER MOS-FET |
Fuji Electric |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |