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SRF2080CE PDF Datasheet

The SRF2080CE is (srf2070ce - Srf20100ce) Switchmode Full PlastIC Dual Schottky Barrier Power. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 SRF2080CE
(SRF2070CE - SRF20100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SRF2070CE Thru SRF20100CE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 70-100 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vo

Mospec Semiconductor
Mospec Semiconductor
pdf

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Recommended search results related to SRF2080CE

Part No Description ( Function) Manufacturers PDF
SRF2080   (SRF2070 - SRF20100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideal

Mospec Semiconductor
Mospec Semiconductor
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SRF2080C   SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER SRF2020C THRU SRF20100C VOLTAGE RANGE CURRENT 20 to100 Volts 16.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability classification 94V-O Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MILS-1

MIC
MIC
datasheet pdf
2SA2080   SILICON PNP EPITAXIAL

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003

Renesas Technology
Renesas Technology
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2SK2080-01   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2080-01 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purp

Inchange Semiconductor
Inchange Semiconductor
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2SK2080-01R   N-CHANNEL SILICON POWER MOS-FET

Fuji Electric
Fuji Electric
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[1]    

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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