No | Part number | Description ( Function ) | Manufacturers | |
28 | SIR800DP | N-Channel 20 V (D-S) MOSFET New Product SiR800DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.0026 at VGS = 4.5 V 0.0034 at VGS = 2.5 V ID (A)a 50 50 50 41 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directiv |
Vishay |
|
27 | SIR802DP | N-Channel 20 V (D-S) MOSFET New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.005 at VGS = 10 V 0.0057 at VGS = 4.5 V 0.0076 at VGS = 2.5 V ID (A)a 30 30 30 15.5 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directi |
Vishay |
|
26 | SIR804DP | N-Channel 100 V (D-S) MOSFET New Product N-Channel 100 V (D-S) MOSFET SiR804DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.0072 at VGS = 10 V 0.0078 at VGS = 7.5 V 0.0103 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a 60 60 60 Qg (Typ.) 24.8 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET � |
Vishay |
|
25 | SIR808DP | N-Channel 25 V (D-S) MOSFET N-Channel 25 V (D-S) MOSFET SiR808DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 25 RDS(on) () 0.0089 at VGS = 10 V 0.0119 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 7.5 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR808DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249 |
Vishay |
|
24 | SIR812DP | N-Channel 30 V (D-S) MOSFET www.vishay.com SiR812DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.00145 at VGS = 10 V 0.00200 at VGS = 4.5 V ID (A) a 60 60 PowerPAK® SO-8 Single D D8 D7 D6 5 Qg (TYP.) 109 nC 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR812DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • T |
Vishay |
|
23 | SIR818DP | N-Channel 30 V (D-S) MOSFET New Product N-Channel 30 V (D-S) MOSFET SiR818DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0028 at VGS = 10 V 30 0.0033 at VGS = 4.5 V ID (A)a, g 50g 50g Qg (Typ.) 30.5 nC PowerPAK® SO-8 6.15 mm S 1S 5.15 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR818DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Acc |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |