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Datasheet SIHG20N50C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SIHG20N50CPower MOSFET, Transistor

SiHG20N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 76 21 34 Single D FEATURES 560 0.270 TO-247AC • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Aval
Vishay Siliconix
Vishay Siliconix
mosfet


SIH Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SiHA12N60EPower MOSFET, Transistor

www.vishay.com SiHA12N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 58 6 13 Single 0.38 ORDERING INFORMATION Packa
Vishay
Vishay
mosfet
2SiHA14N60EPower MOSFET, Transistor

www.vishay.com SiHA14N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 64 8 13 Single 0.269 ORDERING INFORMATION Pack
Vishay
Vishay
mosfet
3SiHA15N60EPower MOSFET, Transistor

www.vishay.com SiHA15N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 76 11 17 Single 0.28 Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET FEATURES • Low figure-of
Vishay
Vishay
mosfet
4SiHA21N60EFEF Series Power MOSFET

www.vishay.com SiHA21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single 0.176 O
Vishay
Vishay
mosfet
5SiHA21N65EFE Series Power MOSFET

www.vishay.com SiHA21N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 106 14 33 Single 0.18 OR
Vishay
Vishay
mosfet
6SIHA22N60AEMOSFET, Transistor

www.vishay.com SiHA22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 96 12 25 Single 0.156 Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET FEATURES • Low figure
Vishay
Vishay
mosfet
7SiHA22N60EE Series Power MOSFET

www.vishay.com SiHA22N60E Vishay Siliconix E Series Power MOSFET Thin-Lead TO-220 FULLPAK D G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max (). at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 86 11 24 Single 0.18 FEATURES • Low figure-o
Vishay
Vishay
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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