Datasheet SIC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
84	SIC02A065NS	SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M	Pan Jit International
83	SIC02A065T	SILICON CARBIDE SCHOTTKY DIODE SiC02A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo	Pan Jit International
82	SIC02A120S	SILICON CARBIDE SCHOTTKY DIODE SiC02A120S SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mol	Pan Jit International
81	SIC04A065ND	SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M	Pan Jit International

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Número de pieza	Descripción	Fabricantes	PDF
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