pdf datasheet site - dataSheet39.com


SI2305 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 SI2305
p-Channel MOSFET

Í·îíðë Ðóݸ¿²²»´ ïòîëóÉô ïòèóÊ øÙóÍ÷ ÓÑÍÚÛÌ ÐÎÑÜËÝÌ ÍËÓÓßÎÇ ÊÜÍ øÊ÷ ó îð ®ÜÍø±²÷ ø ÷ ðòðêë ¿¬ ÊÙÍ ã ó ìòë Ê ðòðèë ¿¬ ÊÙÍ ã ó îòë Ê ×Ü øß÷ o íòî o îòð ÚÛßÌËÎÛÍ Ð±©»® ÓÑÍÚÛÌ-æ ïòè Ê Î¿¬»¼ о󺮻» ߪ¿·´¿¾´» αØÍö ÝÑ

ETC
ETC
pdf
6 SI2305
P-Channel Enhancement Mode Field Effect Transistor

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2305 • • • • • • • • Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 TrenchFET Power MOSFET Load Switch for Portab

MCC
MCC
pdf
5 SI2305
20V P-Channel Enhancement Mode MOSFET

SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G

HT Semi
HT Semi
pdf
4 SI2305ADS
P-Channel 8-V (D-S) MOSFET

New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Load Switch

Vishay Siliconix
Vishay Siliconix
pdf
3 SI2305CDS
P-Channel 8 V (D-S) MOSFET

Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) 0.035 at VGS = - 4.5 V 0.048 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A)d - 5.8 - 5.0 - 4.3 12 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/

Vishay Siliconix
Vishay Siliconix
pdf
2 SI2305DS
P-Channel Power MOSFE

P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone

TOPSKY
TOPSKY
pdf


Share Link

[1] [2] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  SI2


DataSheet39.com    |   2020    |  Privacy Policy  |  Contact Us